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  Datasheet File OCR Text:
 CMXT3906 SURFACE MOUNT DUAL PNP SILICON TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXT3906 type is a dual PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package, and designed for small signal general purpose amplifier and switching applications. MARKING CODE: X2A
SOT-26 CASE
MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA
40 40 5.0 200 350 -65 to +150 357
UNITS V V V mA mW C C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX ICEV VCE=30V, VEB=3.0V 50 BVCBO IC=10A 40 BVCEO IC=1.0mA 40 BVEBO IE=10A 5.0 VCE(SAT) IC=10mA, IB=1.0mA 0.25 VCE(SAT) IC=50mA, IB=5.0mA 0.40 VBE(SAT) IC=10mA, IB=1.0mA 0.65 0.85 VBE(SAT) IC=50mA, IB=5.0mA 0.95 hFE VCE=1.0V, IC=0.1mA 60 hFE VCE=1.0V, IC=1.0mA 80 hFE VCE=1.0V, IC=10mA 100 300 hFE VCE=1.0V, IC=50mA 60 hFE VCE=1.0V, IC=100mA 30 fT VCE=20V, IC=10mA, f=100MHz 250 Cob VCB=5.0V, IE=0, f=1.0MHz 4.5 Cib VBE=0.5V, IC=0, f=1.0MHz 10 hie VCE=10V, IC=1.0mA, f=1.0kHz 2.0 12
UNITS nA V V V V V V V
MHz pF pF k
R3 (12-February 2010)
CMXT3906 SURFACE MOUNT DUAL PNP SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued: (TA=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS hre VCE=10V, IC=1.0mA, f=1.0kHz 0.1 10 x10-4 hfe VCE=10V, IC=1.0mA, f=1.0kHz 100 400 hoe VCE=10V, IC=1.0mA, f=1.0kHz 3.0 60 S NF VCE=5.0V, IC=100A, RS=1.0k, f=10Hz to 15.7kHz 4.0 dB td VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns tr VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA 35 ns ts VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 225 ns tf VCC=3.0V, IC=10mA, IB1=IB2=1.0mA 75 ns
SOT-26 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) Emitter Q1 2) Base Q1 3) Collector Q2 4) Emitter Q2 5) Base Q2 6) Collector Q1 MARKING CODE: X2A
R3 (12-February 2010)
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